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The SI4850EY, SI-4850EY, SI4850, 4850 is a 60V 6A N-Channel Dual MOSFET N-Channel MOSFET produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
The SI4850EY is a 60V 6A N-Channel Dual MOSFET N-Channel MOSFET produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Specifications: Packing List: 1Pc * SI4850 60V 6A N-Channel Dual MOSFET.Datasheets SI4850EY Video File MOSFET Technologies for Power Conversion EDA / CAD Models Download from Accelerated Designs FET Type MOSFET N-Channel, Metal Oxide FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Rds On (Max) @ Id, Vgs 22 mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) @ Vgs 27nC @ 10V Input Capacitance (Ciss) @ Vds - Power - Max 1.7W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO Online Catalog N-Channel Standard FETs Other Names SI4850EY-T1-E3TR